Measurements of film carrier lifetimes in silicon‐on‐insulator wafers by a contactless dual‐beam optical modulation technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107553
Reference17 articles.
1. The effects of oxygen dose on the formation of buried oxide silicon‐on‐insulator
2. Microstructure of high‐temperature annealed buried oxide silicon‐on‐insulator
3. Profiling of inhomogeneous carrier transport properties with the influence of temperature in silicon‐on‐insulator films formed by oxygen implantation
4. Bulk traps in ultrathin SIMOX MOSFET's by current DLTS
5. Measurements of substrate carrier lifetimes in silicon-on-insulator wafers by a contactless dual-beam optical modulation technique
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1. Si layer transfer to InP substrate using low-temperature wafer bonding;Applied Surface Science;2006-11
2. Design of all-optical switches based on carrier injection in Si/SiO/sub 2/ split-ridge waveguides (SRWs);Journal of Lightwave Technology;2006-09
3. The Buried Oxide Properties in Oxygen Plasma-Enhanced Low-Temperature Wafer Bonding;Journal of The Electrochemical Society;2000
4. Determination of interface recombination velocities and carrier lifetimes in SOI materials by a contactless optical modulation technique;Solid-State Electronics;1995-07
5. A new contactless S-polarized reflectance technique for determining the Si film and buried oxide thickness in silicon-on-insulator materials;Solid-State Electronics;1995-02
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