Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

Published:2008-10-15 Issue:8 Volume:104 Page:083510
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Fernández-Garrido S.,Redondo-Cubero A.,Gago R.,Bertram F.,Christen J.,Luna E.,Trampert A.,Pereiro J.,Muñoz E.,Calleja E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2999564

Reference28 articles.

1. Lattice and energy band engineering in AlInGaN/GaN heterostructures

2. Recombination kinetics in polarization matched GaN/InAlGaN quantum wells

3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

4. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

5. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

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