Recombination kinetics in polarization matched GaN/InAlGaN quantum wells-Reference-Cited by-同舟云学术

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Recombination kinetics in polarization matched GaN/InAlGaN quantum wells

Published:2005-11 Issue:11 Volume:2 Page:3941-3944
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Zamfirescu Marian¹,Vinattieri Anna,Gurioli Massimo¹,Androulidaki M.²,Pelekanos N. T.²³,Dimakis E.²,Georgakilas A.²⁴

Affiliation:

1. CNISM, Dipartimento di Fisica and LENS, Universita' di Firenze, via Sansone 1, 50019 Sesto Fiorentino, Italy

2. Microelectronics Research Group, FORTH/IESL, P.O. Box 1527, 71110 Heraklion, Crete, Greece

3. Materials Science and Technology Dept., Univ. of Crete, P.O Box 2208, 71003 Heraklion Crete, Greece

4. Physics Dept., Univ. of Crete, P.O. Box 2208, 71003 Heraklion Crete, Greece

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200562042

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy;Applied Physics Letters;2015-09-28

2. Anomalous luminescence behavior in the InAlGaN thin film;Journal of Alloys and Compounds;2011-02

3. Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy;Journal of Applied Physics;2008-10-15

4. Photoluminescence enhancement in quaternary III-nitrides alloys grown by molecular beam epitaxy with increasing Al content;Journal of Applied Physics;2008-02-15

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