Optoelectronic properties of hydrogenated amorphous silicon films deposited under negative substrate bias
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348605
Reference45 articles.
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3. Positive‐ion bombardment of substrates in rf diode glow discharge sputtering
4. Investigation of the growth kinetics of glow‐discharge hydrogenated amorphous silicon using a radical separation technique
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2. Structural characterization of the interface structure of amorphous silicon thin films after post-deposition argon or hydrogen plasma treatment;Applied Surface Science;2017-05
3. Carrier collection losses in interface passivated amorphous silicon thin-film solar cells;Applied Physics Letters;2016-07-25
4. Controllable synthesis of silicon nano-particles using a one-step PECVD-ionic liquid strategy;Journal of Materials Chemistry A;2015
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