Recombination activity of threading dislocations in GaInP influenced by growth temperature
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106, USA
2. Department of Earth Science, University of California, Santa Barbara, California 93106, USA
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5018849
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3. Glide of threading dislocations in (In)AlGaAs on Si induced by carrier recombination: Characteristics, mitigation, and filtering;Journal of Applied Physics;2019-04-28
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