The improvement of retention time of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Y2O3)-semiconductor transistors by surface treatments
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2822809
Reference23 articles.
1. J. F. Scott,Ferroelectric Memories(Springer, Berlin, 2001), Chap. 12, pp. 175–178.
2. Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures
3. Metal/ferroelectric/insulator/semiconductor structure of Pt/SrBi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer
4. Stack gate PZT/Al2O3 one transistor ferroelectric memory
5. Ferroelectric DRAM (FEDRAM) FET with metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si gate structure
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