Characterization of Pt/Bi3.15Nd0.85Ti3O12/HfO2/Si structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3267153
Reference22 articles.
1. SrBi2Ta2O9 memory capacitor on Si with a silicon nitride buffer
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3. Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM)
4. The improvement of retention time of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Y2O3)-semiconductor transistors by surface treatments
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