Effect of orientation on polarization switching and fatigue of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films at both low and elevated temperatures-Reference-Cited by-同舟云学术

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Effect of orientation on polarization switching and fatigue of Bi3.15Nd0.85Ti2.99Mn0.01O12 thin films at both low and elevated temperatures

Published:2019-04-02 Issue:1 Volume:14 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Zhang Wanli,Mao Yanhu,Yan Shaoan^ORCID,Tang Minghua,Xiao Yongguang,Dang Suihu,Zhao Wenxi,Wang Guangzhao

Funder

National Natural Science Foundation of China

National Key R&D Program of China

Natural Science Foundation of Hunan Province

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect

Chongqing Municipal Education Commission Science and Technology Research Program Youth Project

Provincial Natural Science Foundation of Hunan

Foundation of Innovation Center of Radiation Application

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-019-2949-3.pdf

Reference28 articles.

1. Lee HN, Hesse D, Zakharov N, Gosele U (2002) Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-axis orientation on silicon substrates. Science 296:2006–2009. https://doi.org/10.1126/science.1069958

2. Chon U, Jang HM, Kim MG, Chang CH (2002) Layered perovskites with giant spontaneous polarizations for nonvolatile memories. Phys Rev Lett 89(8):087601 (1-6). https://doi.org/10.1103/PhysRevLett.89.087601

3. Xie D, Luo YF, Han XG, Ren TL, Liu LT (2009) Characterization of Pt/Bi3.15Nd0.85Ti3O12/HfO2/Si structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors. J Appl Phys 106(11):114117 (1-4). https://doi.org/10.1063/1.3267153

4. Rae AD, Thompson JG, Withers RL, Willis AC (1990) Structure refinement of commensurately modulated bismuth titanate, Bi4Ti3O12. Acta Cryst B 46:474–487. https://doi.org/10.1107/S0108768190003251

5. Hu GD (2006) Orientation dependence of ferroelectric and piezoelectric properties of Bi3.15Nd0.85Ti3O12 thin films on Pt(100)/TiO2/SiO2/Si substrates. J Appl Phys 100:096109 (1-3). https://doi.org/10.1063/1.2364668

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1. Origin of Multiferroism of Ion Doped at Different Sites: Bi₄Ti₃O₁₂ Bulk and Nanoparticles;physica status solidi (b);2023-11-02

2. A Comparative Study of the γ‐Ray Radiation Effect on Zr‐Doped and Al‐Doped HfO 2 ‐Based Ferroelectric Memory;physica status solidi (b);2020-02-05

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