A Comparative Study of the γ‐Ray Radiation Effect on Zr‐Doped and Al‐Doped HfO 2 ‐Based Ferroelectric Memory-Reference-Cited by-同舟云学术

A Comparative Study of the γ‐Ray Radiation Effect on Zr‐Doped and Al‐Doped HfO 2 ‐Based Ferroelectric Memory

Author:

Zhang Wanli¹²^ORCID,Li Gang³,Long Xiaojiang¹²,Cui Lian¹²,Tang Minghua³,Xiao Yongguang³,Yan Shaoan⁴,Li Yadong¹²,Zhao Wenxi¹²

Affiliation:

1. School of Electronic Information and Engineering Yangtze Normal University Chongqing 408100 China

2. Key Laboratory of Micro Nano Optoelectronic Devices and Intelligent Perception Systems Yangtze Normal University Chongqing 408100 China

3. School of Material Sciences and Engineering Xiangtan University Xiangtan Hunan 411105 China

4. School of Mechanical Engineering Xiangtan University Xiangtan Hunan 411105 China

Funder

Natural Science Foundation of Chongqing

State Key Laboratory of Intense Pulsed Radiation Simulation and Effect

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

Reference27 articles.

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