Polarization switching and fatigue characteristics of highly (117)-oriented Bi3.15Nd0.85Ti2.99Mn0.01O12 ferroelectric thin films at both low and elevated temperatures-Reference-Cited by-同舟云学术

Polarization switching and fatigue characteristics of highly (117)-oriented Bi3.15Nd0.85Ti2.99Mn0.01O12 ferroelectric thin films at both low and elevated temperatures

Published:2017 Issue:34 Volume:7 Page:20929-20935
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhang W. L.¹²³⁴⁵,Tang M. H.¹²³⁴⁵^ORCID,Xiong Y.⁶³⁴⁵,Yan S. A.⁷³⁴⁸,Cheng C. P.⁹¹⁰⁴⁵,Li G.¹²³⁴⁵,Xiao Y. G.¹²³⁴⁵,Li Z.¹²³⁴⁵

Affiliation:

1. Key Laboratory of Key Film Materials & Application for Equipments (Hunan Province)

2. School of Material Sciences and Engineering

3. Xiangtan University

4. Xiangtan

5. China

6. The School of Mathematics and Computational Science

7. School of Mechanical Engineering

8. People's Republic of China

9. Department of Mathematics and Physics

10. Hunan Institute of Engineering

Abstract

Polarization switching and fatigue properties of BNTM ferroelectric thin films were studied from 100 to 475 K. A combination of impedance spectra and PFM techniques was used to analyze the mechanisms of the dependence on temperature from 200 to 475 K.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA02523H

Reference37 articles.

1. Ferroelectric-gate thin-film transistors with Bi3.15Nd0.85Ti3O12 gate insulators on LaNiO3-buffered Si substrates

2. A ferroelectric tunnel junction based on the piezoelectric effect for non-volatile nanoferroelectric devices

3. Temperature dependence of magnetoelectric effect in Bi3.15Nd0.85Ti3O12–La0.7Ca0.3MnO3 multiferroic composite films buffered by a LaNiO3 layer

4. Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features

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