Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel-Reference-Cited by-同舟云学术

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Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel

Published:2011-02-14 Issue:3 Volume:26 Page:034007
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Yoon Sung-Min,Yang Shinhyuk,Byun Chun-Won,Jung Soon-Won,Ryu Min-Ki,Park Sang-Hee Ko,Kim ByeongHoon,Oh Himchan,Hwang Chi-Sun,Yu Byoung-Gon

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tail state mediated conduction in zinc tin oxide thinfilm phototransistors under below bandgap optical excitation;Scientific Reports;2021-09-24

2. Ferroelectric Polarization Enhancement of Proximity Sensing Performance in Oxide Semiconductor Field-Effect Transistors;ACS Applied Electronic Materials;2020-09-29

3. Designing Multi‐Level Resistance States in Graphene Ferroelectric Transistors;Advanced Functional Materials;2020-06-02

4. P(VDF-TeFE)/Organic Semiconductor Structure Ferroelectric-Gate FETs;Topics in Applied Physics;2020

5. Emerging memory devices for artificial synapses;Journal of Materials Chemistry C;2020

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