Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3086664
Reference33 articles.
1. HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition
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3. Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion
4. Vacancy-mediated dopant diffusion activation enthalpies for germanium
5. Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium
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