Cryo atomic layer etching of SiO2 by C4F8 physisorption followed by Ar plasma-Reference-Cited by-同舟云学术

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Cryo atomic layer etching of SiO2 by C4F8 physisorption followed by Ar plasma

Published:2019-10-07 Issue:15 Volume:115 Page:153109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Antoun G.¹^ORCID,Lefaucheux P.¹,Tillocher T.¹,Dussart R.¹^ORCID,Yamazaki K.²,Yatsuda K.²,Faguet J.³,Maekawa K.³

Affiliation:

1. GREMI, Orléans University-CNRS, 14 Rue d'Issoudun BP 6744, 45067 Orléans, France

2. Tokyo Electron Limited, Akasaka Biz Tower, 3–1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325, Japan

3. TEL Technology Center, America, LLC, NanoFab 300 South 255 Fuller Rd., Suite 214, Albany, New York 12203, USA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5119033

Reference29 articles.

1. Atomic Layer Etching at the Tipping Point: An Overview

2. The grand challenges of plasma etching: a manufacturing perspective

3. Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

4. Overview of atomic layer etching in the semiconductor industry

5. Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma

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1. Characteristics of clean SiO2 atomic layer etching based on C6F6 physisorption;Applied Surface Science;2024-10

2. Future of plasma etching for microelectronics: Challenges and opportunities;Journal of Vacuum Science & Technology B;2024-06-07

3. Clean SiO₂ atomic layer etching based on physisorption of high boiling point perfluorocarbon;Nanoscale;2024

4. Characteristics of high aspect ratio SiO2 etching using C4H2F6 isomers;Applied Surface Science;2023-12

5. Cryo Plasma Etching of Porous Low-k Dielectrics;High Energy Chemistry;2023-09-08

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