Transverse-optical phonons excited in Si using a high-numerical-aperture lens
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3441042
Reference20 articles.
1. Ext. Abs. of Solid State Devices and Materials;Takei M.,2009
2. Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors
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4. Selection rules of Raman scattering by optical phonons in strained cubic crystals
5. Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits
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