Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors-Reference-Cited by-同舟云学术

Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors

Published:2007-11-12 Issue:20 Volume:91 Page:202117
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Seike A.,Tange T.,Sugiura Y.,Tsuchida I.,Ohta H.,Watanabe T.,Kosemura D.,Ogura A.,Ohdomari I.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2812577

Reference17 articles.

1. H. Lee, S.W. Ryu, J.W. Han, L.E. Yu, M. Im, C. Kim, S. Kim, E. Lee, K.H. Kim, J.H. Kim, D.I. Bae, S. C. Jeon, K. H. Kim, G. S. Lee, J. S. Oh, Y. C. Park, W. H. Bae, J. J. Yoo, J. M. Yang, H. M. Lee, and Y.K. Choi, 2007 IEEE Symposium on VLSI Technology, Digest of Technical Papers, pp. 114–115.

2. Ge/Si nanowire heterostructures as high-performance field-effect transistors

3. Vertical high-mobility wrap-gated InAs nanowire transistor

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