Effect of Native Oxide on Stress in Silicon Nanowires: Implications for Nanoelectromechanical Systems

Author:

Nasr Esfahani Mohammad1ORCID,Zare Pakzad Sina2ORCID,Li Taotao3ORCID,Li XueFei3,Tasdemir Zuhal4,Wollschläger Nicole5,Leblebici Yusuf67,Alaca B. Erdem289ORCID

Affiliation:

1. School of Physics, Engineering and Technology, University of York, York YO10 5DD, U.K.

2. Department of Mechanical Engineering, Koç University, Sariyer, Istanbul 34450, Turkey

3. School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu, 210093, China

4. Laboratory of Micro and Nanotechnology, Paul Scherrer Institute, Forschungsstrasse 111, Villigen PSI CH-5232, Switzerland

5. Department 5.1: Materialography, Fractography and Aging of Technical Materials, Bundesanstalt für Materialforschung und -prüfung (BAM), Unter den Eichen 87, Berlin 12205, Germany

6. Microelectronic Systems Laboratory, Swiss Federal Institute of Technology─Lausanne (EPFL), Lausanne, CH-1015, Switzerland

7. Rectorate, Sabanci University, Tuzla, Istanbul 34956, Turkey

8. n2STAR-Koç University Nanofabrication and Nanocharacterization Center for Scientific and Technological Advanced Research, Koç University, Sariyer, Istanbul 34450, Turkey

9. Koç University Surface Technologies Research Center (KUYTAM), Koç University, Sariyer, Istanbul 34450, Turkey

Funder

T?rkiye Bilimsel ve Teknolojik Arastirma Kurumu

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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1. Investigation of the Bending Behavior in Silicon Nanowires: A Nanomechanical Modeling Perspective;International Journal of Applied Mechanics;2024-07-12

2. An analytical-atomistic model for elastic behavior of silicon nanowires;Journal of Physics: Materials;2024-07-01

3. High-Throughput Vibrational Testing of Silicon Nanowires;2024 International Conference on Manipulation, Automation and Robotics at Small Scales (MARSS);2024-07-01

4. Mechanical properties of silicon nanowires with native oxide surface state;Materials Today Communications;2024-03

5. Simplified top-down fabrication of sub-micron silicon nanowires;Semiconductor Science and Technology;2023-11-07

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