Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements-Reference-Cited by-同舟云学术

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Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

Published:2018-08 Issue:8 Volume:8 Page:085305
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Fujita Eigo¹,Sometani Mitsuru²^ORCID,Hatakeyama Tetsuo²,Harada Shinsuke²,Yano Hiroshi³,Hosoi Takuji¹,Shimura Takayoshi¹^ORCID,Watanabe Heiji¹

Affiliation:

1. Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

2. National Institute of Advanced Industrical Science and Technology, Tsukuba, Ibaraki 305-8569, Japan

3. Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5034048

Reference23 articles.

1. Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC

2. Shallow electron traps at the 4H–SiC/SiO2 interface

3. Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties

4. Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research on Interface Properties of Thermally Grown SiO₂ and ALD SiO₂ Stacked Structures;ECS Journal of Solid State Science and Technology;2023-05-01

2. Effects of Oxidation Duration on the Structural and Electrical Characteristics of Ho2O3 Gate Oxide on 4H-SiC Substrate;Journal of Electronic Materials;2022-05-22

3. Comparative Study of Hall Effect Mobility in Inversion Layer of 4H-SiC MOSFETs With Nitrided and Phosphorus-Doped Gate Oxides;IEEE Transactions on Electron Devices;2021-12

4. Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation;Applied Physics Express;2021-08-24

5. Free carrier density enhancement of 4H-SiC Si-face MOSFET by Ba diffusion process and NO passivation;Japanese Journal of Applied Physics;2021-02-09

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