Hydrostatic pressure dependence of polarization-induced interface charge in AlGaN∕GaN heterostructures determined by means of capacitance-voltage characterization-Reference-Cited by-同舟云学术

Hydrostatic pressure dependence of polarization-induced interface charge in AlGaN∕GaN heterostructures determined by means of capacitance-voltage characterization

Published:2006 Issue:11 Volume:100 Page:113712
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Franssen G.,Plesiewicz J. A.,Dmowski L. H.,Prystawko P.,Suski T.,Krupczyński W.,Jachymek R.,Perlin P.,Leszczyński M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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4. High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE

5. Monte Carlo calculation of velocity-field characteristics of wurtzite GaN

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