Microwave performance of 0.25 [micro sign]m doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures-Reference-Cited by-同舟云学术

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Microwave performance of 0.25 [micro sign]m doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures

Published:1997 Issue:7 Volume:33 Page:637
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Chen Q.,Gaska R.,Asif Khan M.,Shur M.S.,Ping A.,Adesida I.,Burm J.,Schaff W.J.,Eastman L.F.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19970403?crawler=true&mimetype=application/pdf

Reference12 articles.

1. Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

2. Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency

3. CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz

4. Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN

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1. (Invited) Physics of GaN High Electron Mobility Transistors;ECS Transactions;2016-09-23

2. Structure-related optical behavior of nanoscale GaN island, tip, tube and cone arrays formed by inductively coupled plasmas etching;Applied Physics A;2016-02-24

3. High-temperature electrical transport in Al[sub x]Ga[sub 1−x]N∕GaN modulation doped field-effect transistors;Journal of Applied Physics;2006

4. Hydrostatic pressure dependence of polarization-induced interface charge in AlGaN∕GaN heterostructures determined by means of capacitance-voltage characterization;Journal of Applied Physics;2006

5. Temperature-Dependent Electron Transport Properties of AlGaN/GaN Heterostructures;Japanese Journal of Applied Physics;2004-05-21

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