In situselective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic-Reference-Cited by-同舟云学术

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In situselective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic

Published:1997-05-12 Issue:19 Volume:70 Page:2589-2591
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li N. Y.,Hsin Y. M.,Bi W. G.,Asbeck P. M.,Tu C. W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.119087

Reference9 articles.

1. Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy

2. In-situ dry etching of InP using phosphorus trichloride and regrowth inside a chemical beam epitaxial growth chamber

3. The etching effect of trisdimethylaminoantimony on (001) planar substrates

4. Growth, etching, doping and effects of Ar+ laser irradiation in chemical beam epitaxy of GaAs with novel precursors

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1. Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces;Progress in Crystal Growth and Characterization of Materials;2016-12

2. Self-assembling nanostructures and atomic layer precise etching in molecular beam epitaxy;Solid State Ionics;2000-06-01

3. In situetching with AsBr3and regrowth in molecular beam epitaxy;Semiconductor Science and Technology;2000-02-01

4. Atomic layer in situ etching and MBE regrowth;Journal of Crystal Growth;1999-05

5. Planar semiconductor lasers using the photoelastic effect;Journal of Applied Physics;1998-06-15

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