Growth, etching, doping and effects of Ar+ laser irradiation in chemical beam epitaxy of GaAs with novel precursors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference46 articles.
1. Surface chemistry of a new III–V MOCVD reactant: PhAsH2 on GaAs(100)
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3. The use of organic As precursors in the low pressure MOCVD of GaAs
4. Growth of high‐quality GaAs using trimethylgallium and diethylarsine
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigations on the mechanisms responsible for Ar+-laser-induced growth enhancement of GaAs by chemical beam epitaxy;Journal of Crystal Growth;2000-07
2. Evaluation of temperature rise on semiconductor surfaces associated with scanning Ar+ lasers;Journal of Crystal Growth;2000-07
3. Addendum to “Metalorganic molecular beam epitaxy and etching of GaAs and GaSb using trisdimethylaminoarsenic and trisdimethylaminoantimony” [J. Crystal Growth 145 (1994) 668];Journal of Crystal Growth;1997-12
4. In situselective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic;Applied Physics Letters;1997-05-12
5. Improving the etched/regrown GaAs interface by in-situ etching using tris-dimethylaminoarsenic;Journal of Crystal Growth;1997-05
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