The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination-Reference-Cited by-同舟云学术

The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination

Published:2010-06-28 Issue:26 Volume:96 Page:262109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Joon Seok,Kim Tae Sang,Son Kyoung Seok,Lee Kwang-Hee,Maeng Wan-Joo,Kim Hyun-Suk,Kim Eok Su,Park Kyung-Bae,Seon Jong-Baek,Choi Woong,Ryu Myung Kwan,Lee Sang Yoon

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3435482

Reference15 articles.

1. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. Toward High-Performance Amorphous GIZO TFTs

4. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

5. Influence of Illumination on the Negative-Bias Stability of Transparent Hafnium–Indium–Zinc Oxide Thin-Film Transistors

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