Influence of Illumination on the Negative-Bias Stability of Transparent Hafnium–Indium–Zinc Oxide Thin-Film Transistors-Reference-Cited by-同舟云学术

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Influence of Illumination on the Negative-Bias Stability of Transparent Hafnium–Indium–Zinc Oxide Thin-Film Transistors

Published:2010-05 Issue:5 Volume:31 Page:440-442
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Joon Seok Park ,Tae Sang Kim ,Kyoung Seok Son ,Ji Sim Jung ,Kwang-Hee Lee ,Jang-Yeon Kwon ,Bonwon Koo ,Sangyoon Lee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5453316/05438732.pdf?arnumber=5438732

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2. Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors With SiAlO_X Dielectric;IEEE Transactions on Electron Devices;2023-02

3. Schottky Contact-induced Hump Phenomenon by Bias and Optical Stresses in Amorphous Oxide Thin Film Transistor;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2022-02-28

4. Investigation of the Stability and the Transparency of Oxide Thin Film Transistor with bi-Layer Channels and Oxide/Metal/Oxide Multilayer Source/Drain Electrodes;Transactions on Electrical and Electronic Materials;2022-02-17

5. Improvement in Instability of Transparent ALD ZnO TFTs Under Negative Bias Illumination Stress With SiO/AlO Bilayer Dielectric;IEEE Journal of the Electron Devices Society;2022

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