Improvement in Instability of Transparent ALD ZnO TFTs Under Negative Bias Illumination Stress With SiO/AlO Bilayer Dielectric
Author:
Affiliation:
1. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
Funder
NSFC
National Science Foundation of Zhejiang Province, China
Sichuan Science and Technology Agency
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/9714452/09913213.pdf?arnumber=9913213
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparative analysis on negative-bias-illumination-stress instabilities between planar- and vertical-channel thin-film transistors using InGaZnO active channels prepared by atomic-layer deposition;Materials Science in Semiconductor Processing;2024-10
2. Study on blue and white electroluminescence based on Ga2O3 composite films;Journal of Alloys and Compounds;2024-06
3. Hf-doped ZnO transistor with high bias stability and high field-effect mobility by modulation of oxygen vacancies and interfaces;Journal of Materials Science & Technology;2023-11
4. CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor;Nature Communications;2023-09-28
5. Atomic layer deposition for nanoscale oxide semiconductor thin film transistors: review and outlook;International Journal of Extreme Manufacturing;2023-02-03
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