Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1636820
Reference8 articles.
1. Silicon-Germanium Strained Layer Materials in Microelectronics
2. Sub-100 nm Gate Technologies for Si/SiGe-Buried-Channel RF Devices
3. Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors
4. Effect of helium ion implantation and annealing on the relaxation behavior of pseudomorphic Si1−xGex buffer layers on Si (100) substrates
5. Effect of dislocations in strained Si/SiGe on electron mobility
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