Sub-100 nm Gate Technologies for Si/SiGe-Buried-Channel RF Devices-Reference-Cited by-同舟云学术

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Sub-100 nm Gate Technologies for Si/SiGe-Buried-Channel RF Devices

Published:2003-04-30 Issue:Part 1, No. 4B Volume:42 Page:2363-2366
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Zeuner Marco,Hackbarth Thomas,Enciso-Aguilar Mauro,Aniel Frederic,Känel Hans von

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=4S/a=2363/pdf

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TCAD study of sub-THz photovoltaic response of strained-Si MODFET;Journal of Physics: Conference Series;2015-10-13

2. Optimization of THz response of strained-Si MODFETs;physica status solidi (c);2015-08-31

3. Effect of the gate scaling on the analogue performance of s-Si CMOS devices;Semiconductor Science and Technology;2011-08-16

4. Noise in strained Si MOSFETs for low-power applications;Journal of Statistical Mechanics: Theory and Experiment;2009-01-07

5. C–V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures;Applied Surface Science;2008-07

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