The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs-Reference-Cited by-同舟云学术

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The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs

Published:2010-03 Issue:3 Volume:54 Page:327-335
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Alatise O.M.,Kwa K.S.K.,Olsen S.H.,O’Neill A.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Analysis and fabrication deep submicron strained Si n-MOSFETs;Rim;IEEE Trans Electron Dev,2000

2. Uniaxial process induced strained Si: extending the CMOS roadmap;Thompson;IEEE Trans Electron Dev,2006

3. A logic technology featuring strained silicon;Thompson;IEEE Electron Dev Lett,2004

4. A 90nm logic technology featuring strained silicon;Thompson;IEEE Trans Electron Dev,2004

5. Evidence of reduced self heating in strained Si MOSFETs;Nicholas;IEEE Electron Dev Lett,2005

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Temperature Jump on Nonequilibrium Entropy Generation in a MOSFET Transistor Using Dual-Phase-Lagging Model;Journal of Heat Transfer;2017-07-19

2. (Invited) Group IV Epitaxy Applications for Enabling Advanced Device Scaling;ECS Transactions;2016-08-18

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