Evidence of reduced self-heating in strained Si MOSFETs-Reference-Cited by-同舟云学术

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Evidence of reduced self-heating in strained Si MOSFETs

Published:2005-09 Issue:9 Volume:26 Page:684-686
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Nicholas G.,Grasby T.J.,Parker E.H.C.,Whall T.E.,Skotnicki T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/32196/01498999.pdf?arnumber=1498999

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Performance Exploration of Buried Channel In0.53Ga0.47/InP Stepped Poly Gate MOSFET Using Asymmetric Underlap Gate Spacer;IETE Technical Review;2021-11-25

2. Impact of High-k Gate Dielectric on Self-Heating Effects in PiFETs Structure;IEEE Transactions on Electron Devices;2020-09

3. Grooved-gate silicon-on-nothing (SON) MOSFET: evidence for suppressing SCEs;Nanomaterials and Energy;2019-12-01

4. Thermal analysis of self-heating in saddle MOSFET devices;Japanese Journal of Applied Physics;2014-01-15

5. Strain effect and phonon transport in strained-silicon-based transistors;Journal of Mechanical Science and Technology;2013-09

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