Polarity dependent thermochemical E-model for describing time dependent dielectric breakdown in metal-oxide-semiconductor devices with hyper-thin gate dielectrics

Author:

McPherson J. W.1ORCID

Affiliation:

1. McPherson Reliability Consulting LLC, 2805 Shelton Way, Plano, Texas 75093, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference26 articles.

1. J. McPherson and D. Baglee , in International Reliability Physics Proceedings ( IEEE, Piscataway, NJ, 1985), p. 1.

2. I. Chen , S. Holland , and C. Hu , in International Reliability Physics Proceedings ( IEEE, Piscataway, NJ, 1985), p. 24.

3. Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films

4. Determination of the nature of molecular bonding in silica from time-dependent dielectric breakdown data

5. H. Lorentz , The Theory of Electrons and Its Application to the Phenomena of Light & Radiant Heat, 2nd ed. ( Dover Publications, 2011).

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