Vacancy-oxygen defects in p-type Si1−xGex
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4896728
Reference38 articles.
1. Versatile buffer layer architectures based on Ge1−xSnx alloys
2. Intrinsic and extrinsic diffusion of indium in germanium
3. Vacancy-mediated dopant diffusion activation enthalpies for germanium
4. Self-diffusion in germanium isotope multilayers at low temperatures
5. Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of germanium doping on the formation kinetics of vacancy-dioxygen complexes in high dose neutron irradiated crystalline silicon;Journal of Applied Physics;2017-09-07
2. Rapid thermal processing induced vacancy-oxygen complexes in Czochralski-grown Si1−xGex;Journal of Materials Science: Materials in Electronics;2015-06-27
3. Engineering VO, CiOi and CiCs defects in irradiated Si through Ge and Pb doping;Journal of Materials Science: Materials in Electronics;2015-01-21
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