Effect of germanium doping on the formation kinetics of vacancy-dioxygen complexes in high dose neutron irradiated crystalline silicon-Reference-Cited by-同舟云学术

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Effect of germanium doping on the formation kinetics of vacancy-dioxygen complexes in high dose neutron irradiated crystalline silicon

Published:2017-09-07 Issue:9 Volume:122 Page:095704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dong Peng¹²,Yu Xuegong²,Chen Lin²,Ma Xiangyang²,Yang Deren²

Affiliation:

1. Microsystem and Terahertz Research Center and Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, 621999, People's Republic of China

2. State Key Laboratory of Si Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China

Funder

Science Challenge Project

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5001139

Reference36 articles.

1. Impurity engineering of Czochralski silicon

2. Oxygen defect processes in silicon and silicon germanium

3. Germanium doping for improved silicon substrates and devices

4. Germanium effect on void defects in Czochralski silicon

5. On the assumed impact of germanium doping on void formation in Czochralski-grown silicon

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Substitutional carbon-dioxygen center in irradiated silicon;Materials Science in Semiconductor Processing;2021-06

2. Role of the intensity of high-temperature electron irradiation in accumulation of vacancy-oxygen defects in Cz n-Si;Journal of Materials Research;2021-03-15

3. Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon;Journal of Electronic Materials;2018-05-14

4. The CiCs(SiI)n Defect in Silicon from a Density Functional Theory Perspective;Materials;2018-04-16

5. Growth and ripening of oxygen precipitation in neutron-irradiated Czochralski silicon;Materials Science in Semiconductor Processing;2018-02

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