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Germanium doping for improved silicon substrates and devices

Published:2011-02 Issue:1 Volume:317 Page:8-15
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Vanhellemont J.,Chen J.,Lauwaert J.,Vrielinck H.,Xu W.,Yang D.,Rafí J.M.,Ohyama H.,Simoen E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference43 articles.

1. Vacancy-type microdefect formation in Czochralski silicon

2. On intrinsic point defect cluster formation during Czochralski crystal growth

3. Czochralski growth of Si- and Ge-rich SiGe single crystals

4. Growth and fundamental properties of SiGe bulk crystals

5. Germanium effect on oxygen precipitation in Czochralski silicon

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive understanding on germanium-doping effects on oxygen precipitation in Czochralski silicon wafers with a prior rapid thermal anneal;Applied Physics A;2021-11

2. Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon;Journal of Electronic Materials;2021-04-21

3. Oxygen precipitation in Ge-doped Czochralski-silicon at 900 °C investigated by in situ high energy x-ray diffraction;AIP Advances;2020-10-01

4. Properties of silicon crystals;Handbook of Silicon Based MEMS Materials and Technologies;2020

5. Electron Radiation Effects on the 4H-SiC PiN Diodes Characteristics: An Insight From Point Defects to Electrical Degradation;IEEE Access;2019

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