Charge transition levels of oxygen, lanthanum, and fluorine related defect structures in bulk hafnium dioxide (HfO2): An ab initio investigation-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Charge transition levels of oxygen, lanthanum, and fluorine related defect structures in bulk hafnium dioxide (HfO2): An ab initio investigation

Published:2015-06-28 Issue:24 Volume:117 Page:244503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Leitsmann Roman¹,Lazarevic Florian¹,Nadimi Ebrahim²,Öttking Rolf³,Plänitz Philipp¹,Erben Elke⁴

Affiliation:

1. AQomputare GmbH, Annabergerstr. 240, 09125 Chemnitz, Germany

2. Faculty of Electrical Engineering, K. N. Toosi University of Technology, 16317-14191 Tehran, Iran

3. Institut für Physik, Technische Universität Illmenau, 98693 Illmenau, Germany

4. Globalfoundries Dresden, Wilschdorfer Landstr. 101, 01109 Dresden, Germany

Funder

European fund for Regional Development

Free State of Saxony (Sächsische AufbauBank)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4923220

Reference43 articles.

1. High dielectric constant gate oxides for metal oxide Si transistors

2. HKMG CMOS technology qualification: The PBTI reliability challenge

3. High-κ gate dielectrics: Current status and materials properties considerations

4. High-κ/Metal Gate Science and Technology

5. Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band offset and leakage current in fluorine doped Si/HfO2/SiO2 gate stack of metal oxide semiconductor field effect transistors: An ab initio investigation;Thin Solid Films;2022-03

2. Nitrogen Engineering in the Ultrathin SiO2 Interface Layer of High- ${k}$ CMOS Devices: A First-Principles Investigation of Fluorine, Oxygen, and Boron Defect Migration;IEEE Transactions on Electron Devices;2017-12

3. Modeling the effects of lanthanum, nitrogen, and fluorine treatments of Si-SiON-HfO2-TiN gate stacks in 28 nm high-k-metal gate technology;Journal of Applied Physics;2017-06-21

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3