Nitrogen Engineering in the Ultrathin SiO2 Interface Layer of High- ${k}$ CMOS Devices: A First-Principles Investigation of Fluorine, Oxygen, and Boron Defect Migration-Reference-Cited by-同舟云学术

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Nitrogen Engineering in the Ultrathin SiO2 Interface Layer of High- ${k}$ CMOS Devices: A First-Principles Investigation of Fluorine, Oxygen, and Boron Defect Migration

Published:2017-12 Issue:12 Volume:64 Page:5073-5080
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lazarevic Florian¹^ORCID,Leitsmann Roman¹,Drescher Maximilian²,Erben Elke³,Planitz Philipp¹,Schreiber Michael⁴

Affiliation:

1. AQcomputare GmbH, Chemnitz, Germany

2. Fraunhofer Institute for Photonic Microsystems-CNT, Dresden, Germany

3. GLOBALFOUNDRIES Dresden Modul One LLC & Co.KG, Dresden, Germany

4. Institute of Physics, Chemnitz University of Technology, Chemnitz, Germany

Funder

Sächsische AufbauBank via the projects HEIKO and ANGELA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8103302/08103308.pdf?arnumber=8103308

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