Modeling the effects of lanthanum, nitrogen, and fluorine treatments of Si-SiON-HfO2-TiN gate stacks in 28 nm high-k-metal gate technology-Reference-Cited by-同舟云学术

Modeling the effects of lanthanum, nitrogen, and fluorine treatments of Si-SiON-HfO2-TiN gate stacks in 28 nm high-k-metal gate technology

Published:2017-06-21 Issue:23 Volume:121 Page:234501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Leitsmann Roman¹²,Lazarevic Florian¹^ORCID,Drescher Maximilian³,Erben Elke⁴

Affiliation:

1. AQcomputare Gesellschaft für Materialberechnung mbH, Annaberger Str. 240, 09125 Chemnitz, Germany

2. Dresden Center for Computational Materials Science (DCMS), TU Dresden, 01069 Dresden, Germany

3. Fraunhofer IPMS-CNT, Königsbrückerstr. 178, 01099 Dresden, Germany

4. Globalfoundries, Wilschdorfer Landstr. 101, 01109 Dresden, Germany

Funder

Sächsische AufbauBank (SAB)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4986494

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5. G. Bersuker , D. Heh , C. Young , H. Park , P. Khanal , L. Larcher , A. Padovani , P. Lenahan , J. Ryan , B. H. Lee , H. Tseng , and R. Jammy , in Proceedings of the IEEE IEDM (2008), p. 1.

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