C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4884828
Reference26 articles.
1. Diamond devices and electrical properties
2. High-temperature, high-voltage operation of pulse-doped diamond MESFET
3. High Temperature Operation of Boron-Implanted Diamond Field-Effect Transistors
4. High-Temperature Operation of Diamond Junction Field-Effect Transistors With Lateral p-n Junctions
5. Enhancement mode metal‐semiconductor field effect transistors using homoepitaxial diamonds
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