Band gap bowing for high In content InAlN films-Reference-Cited by-同舟云学术

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Band gap bowing for high In content InAlN films

Published:2019-07-21 Issue:3 Volume:126 Page:035703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cramer Richard C.¹,Kyle Erin C. H.¹,Speck James S.¹

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, USA

Funder

Collaborative Research in Engineering, Science, and Technology

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5089671

Reference38 articles.

1. Temperature dependence of the fundamental band gap of InN

2. Band-edge exciton states in AlN single crystals and epitaxial layers

3. 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

4. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

5. Growth of coherent BGaN films using BBr3 gas as a boron source in plasma assisted molecular beam epitaxy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Facile integration of an Al-rich Al_1–x In_x N photodetector on free-standing GaN by radio-frequency magnetron sputtering;Chinese Physics B;2023-11-01

2. Composition-dependent photoconductivities in indium aluminium nitride nanorods grown by magnetron sputter epitaxy;Nanoscale Advances;2022

3. Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges;Scientific Reports;2020-10-01

4. Photo- and electro-luminescence studies of semipolar ( 11 2 ¯ 2 ) InxAl1−xN;Journal of Applied Physics;2020-07-28

5. Controlling surface adatom kinetics for improved structural and optical properties of high indium content aluminum indium nitride;Journal of Applied Physics;2020-03-31

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