Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126192
Reference15 articles.
1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
2. Structure of GaN films grown by hydride vapor phase epitaxy
3. GaN Growth Using GaN Buffer Layer
4. Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
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