Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12200-021-1216-2.pdf
Reference20 articles.
1. Yoshida S, Misawa S, Gonda S. Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates. Applied Physics Letters, 1983, 42(5): 427–429
2. Nakamura S. GaN growth using GaN buffer layer. Japanese Journal of Applied Physics, 1991, 30(Part 2, No. 10A): L1705–L1707
3. Nakamura S, Mukai T, Senoh M, Iwasa N. Thermal annealing effects on p-type Mg-doped GaN films. Japanese Journal of Applied Physics, 1992, 31(Part 2, No. 2B): L139–L142
4. Nakamura S, Mukai T, Senoh M. High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes. Journal of Applied Physics, 1995, 76(12): 8189–8191
5. Amano H. Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation. International Journal of Modern Physics B, 2015, 29(32): 1530015
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