Investigating addition effect of hafnium in InZnO thin film transistors using a solution process-Reference-Cited by-同舟云学术

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Investigating addition effect of hafnium in InZnO thin film transistors using a solution process

Published:2010-03 Issue:9 Volume:96 Page:093503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jeong Woong Hee,Kim Gun Hee,Shin Hyun Soo,Du Ahn Byung,Kim Hyun Jae,Ryu Myung-Kwan,Park Kyung-Bae,Seon Jong-Baek,Lee Sang Yoon

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3340943

Reference13 articles.

1. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature

4. Novel ZrInZnO Thin-film Transistor with Excellent Stability

5. High mobility indium free amorphous oxide thin film transistors

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