Dependence of radiation‐induced interface traps on gate Al thickness in metal/SiO2/Si structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334094
Reference17 articles.
1. Radiation-Induced Perturbations of the Electrical Properties of the Silicon-Silicon Dioxide Interface
2. Low energy electron irradiation of the Si-SiO2 interface
3. Origin of Interface States and Oxide Charges Generated by Ionizing Radiation
4. Chemical and Structural Aspects of the Irradiation Behavior of SiO2 Films on Silicon
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