Low energy electron irradiation of the Si-SiO2 interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Buffalo Meeting of Electrochem. Soc.;Balk,1965
2. Kinetics and mechanism of thermal oxidation of silicon with special emphasis on impurity effects
3. Hydrides and Hydroxyls in Thin Silicon Dioxide Films
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2. On the interface trap density and series resistance of tin oxide film prepared on n-type Si (111) substrate: Frequency dependent effects before and after 60Co γ-ray irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-06
3. Electron‐spin‐resonance study of radiation‐induced paramagnetic defects in oxides grown on (100) silicon substrates;Journal of Applied Physics;1988-10
4. Electron trap center generation due to hole trapping in SiO2under Fowler–Nordheim tunneling stress;Applied Physics Letters;1987-08-10
5. Interface‐trap generation modeling of Fowler–Nordheim tunnel injection into ultrathin gate oxide;Journal of Applied Physics;1985-07
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