Enhanced thermally induced stress effect on an ultrathin gate oxide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1452763
Reference16 articles.
1. The effect of patterned susceptor on the thickness uniformity of rapid thermal oxides
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2. Characterization of Inversion Tunneling Current Saturation Behavior for MOS(p) Capacitors With Ultrathin Oxides and High-$k$ Dielectrics;IEEE Transactions on Electron Devices;2009-06
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4. High-<tex>$k$</tex>Al<tex>$_2$</tex>O<tex>$_3$</tex>Gate Dielectrics Prepared by Oxidation of Aluminum Film in Nitric Acid Followed by High-Temperature Annealing;IEEE Transactions on Electron Devices;2004-06
5. Interlayer Growth and Electrical Behavior of Ta[sub 2]O[sub 5]/SiO[sub x]N[sub y]/Si Gate Stacks;Journal of The Electrochemical Society;2004
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