Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1494123
Reference20 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition
3. Structure and stability of ultrathin zirconium oxide layers on Si(001)
4. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
5. Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
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