Deep trap analysis in green light emitting diodes: Problems and solutions-Reference-Cited by-同舟云学术

Deep trap analysis in green light emitting diodes: Problems and solutions

Published:2019-06-07 Issue:21 Volume:125 Page:215701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Polyakov A. Y.¹,Shmidt N. M.²^ORCID,Smirnov N. B.¹^ORCID,Shchemerov I. V.¹,Shabunina E. I.²,Tal’nishnih N. A.³,Lee In-Hwan⁴^ORCID,Alexanyan L. A.¹,Tarelkin S. A.¹⁵^ORCID,Pearton S. J.⁶^ORCID

Affiliation:

1. National University of Science and Technology MISiS, Moscow 194017, Russia

2. Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya Str., St. Petersburg 194021, Russia

3. Submicron Heterostructures for Microelectronics Research and Engineering Center, St. Petersburg 194021, Russia

4. Department of Materials Science and Engineering, Korea University, Seoul 02841, South Korea

5. Technological Institute for Superhard and Novel Carbon Materials, 7 Centralnaya St., Troitsk, Moscow 142190, Russia

6. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

Funder

Ministry of Trade, Industry and Energy

Ministry of Education and Science of the Russian Federation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5093723

Reference27 articles.

1. Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W

2. Status of GaN-based green light-emitting diodes

3. The Effect of Imbalanced Carrier Transport on the Efficiency Droop in GaInN-Based Blue and Green Light-Emitting Diodes

4. Influence of In content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes

5. A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes

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