Influence of In content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes-Reference-Cited by-同舟云学术

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Influence of In content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes

Published:2016-02-17 Issue:11 Volume:49 Page:115112
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Lin Zhiting,Wang Haiyan,Lin Yunhao,Yang Meijuan,Wang Wenliang,Li Guoqiang

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=11/a=115112/pdf

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduction of green-gap effect for light-emitting diodes using InGaN-ZnGeN2-InGaN/GaN type-II MQW;Materials Science and Engineering: B;2024-11

2. Transmission data rate improvement by InGaN barriers in GaN-based blue micro-LEDs for visible light communication;Optics Letters;2022-08-15

3. Deep trap analysis in green light emitting diodes: Problems and solutions;Journal of Applied Physics;2019-06-07

4. Nanodefects in highly imperfect optical crystals;AIP Conference Proceedings;2019

5. Improving radiative recombination efficiency of green light-emitting diodes;Materials Science and Technology;2018-04-12

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