Well-to-well non-uniformity in InGaN/GaN multiple quantum wells characterized by capacitance-voltage measurement with additional laser illumination-Reference-Cited by-同舟云学术

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Well-to-well non-uniformity in InGaN/GaN multiple quantum wells characterized by capacitance-voltage measurement with additional laser illumination

Published:2012-02-13 Issue:7 Volume:100 Page:071910
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Tae-Soo,Ahn Byung-Jun,Dong Yanqun,Park Ki-Nam,Lee Jin-Gyu,Moon Youngboo,Yuh Hwan-Kuk,Choi Sung-Chul,Lee Jae-Hak,Hong Soon-Ku,Song Jung-Hoon

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3685717

Reference26 articles.

1. Origin of efficiency droop in GaN-based light-emitting diodes

2. Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

3. Numerical analysis of efficiency droop induced by piezoelectric polarization in InGaN/GaN light-emitting diodes

4. Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

5. Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

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