Numerical analysis of efficiency droop induced by piezoelectric polarization in InGaN/GaN light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3464976
Reference15 articles.
1. Current Status of GaN-Based Solid-State Lighting
2. Transcending the replacement paradigm of solid-state lighting
3. Auger recombination in InGaN measured by photoluminescence
4. Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes
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3. Internal quantum efficiency enhancement employing composition-graded last quantum barrier and electron blocking layer;Journal of Photonics for Energy;2020-06-16
4. Alleviation of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal quantum barriers;Journal of Physics D: Applied Physics;2018-06-01
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