Resistive switching in aluminum/anodized aluminum film structure without forming process
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3253722
Reference11 articles.
1. Resistance transition in metal oxides induced by electronic threshold switching
2. Electrical observations of filamentary conductions for the resistive memory switching in NiO films
3. Reproducible resistance switching in polycrystalline NiO films
4. Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices
5. Resistive Switching in Pt∕Al[sub 2]O[sub 3]∕TiO[sub 2]∕Ru Stacked Structures
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