Design and synthesis of low temperature printed metal oxide memristors-Reference-Cited by-同舟云学术

Design and synthesis of low temperature printed metal oxide memristors

Published:2021 Issue:11 Volume:9 Page:3911-3918
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Carlos Emanuel¹²³⁴⁵^ORCID,Deuermeier Jonas¹²³⁴⁵^ORCID,Branquinho Rita¹²³⁴⁵,Gaspar Cristina¹²³⁴⁵,Martins Rodrigo¹²³⁴⁵,Kiazadeh Asal¹²³⁴⁵,Fortunato Elvira¹²³⁴⁵^ORCID

Affiliation:

1. CENIMAT/i3N Departamento de Ciência dos Materiais

2. Faculdade de Ciências e Tecnologia (FCT)

3. Universidade NOVA de Lisboa (UNL), and CEMOP/UNINOVA

4. Caparica 2829-516

5. Portugal

Abstract

Printed combustion-based aluminium oxide (AlO_x) resistive switching devices produced at low temperature show a high reproducibility (95%) and multilevel cell operation with potential for hardware security applications.

Funder

Fundação para a Ciência e a Tecnologia

H2020 European Research Council

H2020 European Institute of Innovation and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC05368F

Reference53 articles.

1. A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics